MMN7CB120BA6BS
1200 V / 100 A MacMic SiC MOSFET module in the compact NCB package, 6.8 mOhm Rds(on) for EV and solar.
The MMN7CB120BA6BS is a 1200 V / 100 A MacMic silicon carbide MOSFET module in the compact NCB package, with a typical RDS(on) of about 6.8 mOhm and a junction temperature rating of 175 C. SiC switches faster than silicon with far lower switching loss, so the module raises efficiency and shrinks magnetics in EV drives, charging stations and photovoltaic inverters. Because SiC has no tail current, switching transitions are clean and support higher switching frequencies than silicon IGBTs, which reduces filter and inductor size. The NCB package provides a low-inductance, low-profile footprint suited to compact, high-frequency converters. Every module is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. SiC gate drive differs from silicon, so confirm gate resistance and loop layout with our FAE team, and check the RDS(on) hot value for your thermal budget before finalizing the design. BeiLuo holds this SiC module in stock and ships it with import, origin and RoHS documentation, supporting both evaluation samples and volume production releases.
FAE Professional Review
The MMN7CB120BA6BS is our pick for compact 1200 V SiC converters. At 6.8 mOhm and 175 C it runs cool and fast, and the NCB package keeps loop inductance low. Budget a stiff gate driver; SiC switches fast enough to ring if the loop is loose.
| Parameter | Value |
|---|---|
| VDSS (V) | 1200 V |
| ID (A) | 100 A |
| RDS(on) | 6.8 mOhm |
| Tjmax | 175 C |
| Package | NCB |
Application Circuits
EV traction and drives
Reference circuits and application schematics for EV traction and drives are available from our FAE team.
EV charging stations
Reference circuits and application schematics for EV charging stations are available from our FAE team.
Photovoltaic inverters
Reference circuits and application schematics for Photovoltaic inverters are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| MMN13J120U | SOT-227 | Higher-resistance SOT-227 SiC module for rugged industrial use | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| MMG100J120UZ | GJ-UZ | Silicon IGBT module for the low-frequency stage | View |
| MMF200S120DK | Non-isolated | Fast recovery diode for rectification support | View |
Recommended Complementary Products
Frequently Asked Questions
What makes the NCB SiC module different?
SiC switches faster with lower loss than silicon and has no tail current, so efficiency rises and magnetics shrink. The NCB package adds a low-inductance, low-profile footprint for compact converters.
It suits EV, charging and photovoltaic designs.
How do I drive SiC reliably?
SiC switches fast, so gate-loop inductance and gate resistance dominate ringing and overshoot. Use a stiff driver, short loops and a gate resistor tuned to your EMI target.
Our SiC review covers practical gate-drive choices.
Is the RDS(on) figure enough to size cooling?
No. RDS(on) rises with temperature, so use the hot value at your junction temperature to estimate conduction loss, then add switching loss and verify the thermal path.
Our FAE team can run the numbers for your duty cycle.
Is the module in stock and documented?
This 1200 V SiC module is normally held in regional warehouses and ships with import, origin and RoHS documents. Availability is confirmed per request.
Request a sample for efficiency testing.